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BCR 573 E6327 Datasheet
Datasheet specifications
| Datasheet's name | BCR 573 E6327 |
|---|---|
| File size | 62.866 KB |
| File type | |
| Number of pages | 6 |
Download Datasheet BCR 573 E6327 |
Download Datasheet |
|---|
Other documentations
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Digital Transistors
- Datasheet: Infineon Technologies BCR 573 E6327
- Transistor Type: PNP-预偏置
- Collector Current (Ic): 500mA
- Power Dissipation (Pd): 330mW
- Transition Frequency (fT): 150MHz
- DC Current Gain (hFE@Ic,Vce): 70@5mA,5V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 50V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@2.5mA,50mA
- Package: SOT-23
- Manufacturer: Infineon Technologies
